Various impurities and dislocations create energy levels within the band gap corresponding to neither donor nor acceptor levels, forming deep-level traps.
2.
Shallow donors near the conduction band ( n-type ) allow electrons to be thermally excited into the conduction band, while acceptors near the valence band ( p-type ) allow electrons to jump from the valence band to the acceptor level, populating the valence band with holes.
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